Originally posted by Qiaozhi
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Conclusion : In order to solve the problem of voltage spikes and oscillations caused by the high frequency switching of MOSFETs in power electronic converters, the NAGD is proposed to suppress voltage spikes and oscillations in the turn-off process. The simulation and experimental results show that under the threshold of the gate voltage, the higher the gate voltage is, the better the suppression effect of voltage spike and oscillation will be. At the same time, for higher parasitic inductance and bus voltage, not only can voltage spike and oscillation be effectively suppressed, EMI at high frequencies can also be effectively suppressed. In addition, the control of the NAGD is simple and requires fewer additional components, which is beneficial to the realization of the circuit.
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