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Hello. I need to build a simple pulse-induction detector. I would like to know if it is possible to optimize the transmitter (TX) circuit of an existing metal detector for this purpose.
The operating frequency range is 200 Hz to 1500 Hz. The detector coil has an inductance of 400 µH and a resistance of 2 Ω. Is it worth considering replacing the IRF9640S MOSFET with an FQB12P20G and using a UCC27517 instead of a discrete driver? What are the advantages and potential risks of such a replacement? At first glance, this component swap will increase the pulse edge steepness and enable faster transistor control. On the other hand, the driver's high switching speed may lead to high-frequency ringing (which can likely be mitigated by increasing the gate resistor value). Interference in the TX stage power supply circuit is also a possibility.
The operating frequency range is 200 Hz to 1500 Hz. The detector coil has an inductance of 400 µH and a resistance of 2 Ω. Is it worth considering replacing the IRF9640S MOSFET with an FQB12P20G and using a UCC27517 instead of a discrete driver? What are the advantages and potential risks of such a replacement? At first glance, this component swap will increase the pulse edge steepness and enable faster transistor control. On the other hand, the driver's high switching speed may lead to high-frequency ringing (which can likely be mitigated by increasing the gate resistor value). Interference in the TX stage power supply circuit is also a possibility.
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