Tweet
Hi,
The oscope pictures for the first variant of the schematic of the TX part of the detector points very equal parameters for positive and negative peek voltages on the TX coil - as voltage and time to decay (360V and 5us) . Maybe it is not so difficult to use P-ch and N-ch MOS FETs in half-bridge schematic. Also, I will test next week IPA50R800CE N-ch MOSFET in this design. The parameters (Rds-ON and Cds at Vds 25V) are very close to the same parameters of IXTP10P50P P-ch MOS FET. Maybe IPA50R800CE is more easy to be used as pair to ITXP10P50P in well balanced half-bridge TX PI designs.
The oscope pictures for the first variant of the schematic of the TX part of the detector points very equal parameters for positive and negative peek voltages on the TX coil - as voltage and time to decay (360V and 5us) . Maybe it is not so difficult to use P-ch and N-ch MOS FETs in half-bridge schematic. Also, I will test next week IPA50R800CE N-ch MOSFET in this design. The parameters (Rds-ON and Cds at Vds 25V) are very close to the same parameters of IXTP10P50P P-ch MOS FET. Maybe IPA50R800CE is more easy to be used as pair to ITXP10P50P in well balanced half-bridge TX PI designs.
Comment