I didn't notice that HEX without a counter is unstable.
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felezjoo PI(the best pulse induction metal detector that I made until now)
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https://www.aliexpress.com/item/4001...YkajE3JGwwJGgwOriginally posted by kipi View PostI also made this metal detector. I can't get Lf357 anywhere here. I soldered Lm318 to test and it works poorly. But where to order an original Lf357 op-amp when there are so many fakes on the market?
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Hi you say 18650 in 3.2v each that would only be at 9.6vOriginally posted by MartyJ1963 View PostHi all,,,,,I don't know if this will help anyone but I have 2 x working Felezjoo's and for both I use 3 x 18650 batteries with a DC Adjustable XL6009 Step up step down converter and they work fine and give me about 6 hours detecting time. The 3 x 18650 give me 12v but I adjust the step up converter to 18v and it's been fine,,,no overheating or any other problems. Hope it helps someone. Marty
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18650 cells usually range from 3v - 4.2v, or as low as 2.5v. Their average or nominal voltage is the 3.2v value, but it’s usually higher when it’s fully charged. But note that the voltage can’t accurately tell you how much charge the cell hasOriginally posted by Tanrjrj View Post
Hi you say 18650 in 3.2v each that would only be at 9.6v
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Hi van, maybe because there are two types of battery one is with 3.2v and 3.7v thanks for your ideaOriginally posted by van0014 View Post
18650 cells usually range from 3v - 4.2v, or as low as 2.5v. Their average or nominal voltage is the 3.2v value, but it’s usually higher when it’s fully charged. But note that the voltage can’t accurately tell you how much charge the cell has
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Yes, 3.2v and 3.7v are common average voltages. In practice, you should be getting 4.2v per cell fully charged, and 3v per cell empty. Though some datasheets suggest 2.5v empty, I won’t advise it. They also don’t like to be fully charged, and shouldn’t be left above 4v unless you’re ready to use them. I’ve gone through many batteries, and looked into ways to increase their life
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Yes, these parameters affects the detector but N-ch MOSFETs with Uds=500V and Id =5A to 8A have very similar Rds and Coss parameters. Parameter trr of MOSFETs is less than 100ns and no problem for PI designs.
ST - IRF840_Uds=500V_Id=8A_Rds=0.85R_Coss=131pF at 25V_TO-220
Vishay - IRF840_Uds=500V_Id=8A_Rds=0.85R_Coss=155pF at 25V_TO-220
Infineon - IPA50R800CE_Uds=500V_Id=7.6A_Rds=0.72R_Coss=250pF at 25V_TO-220
ST - STP9NK50Z_Uds=500V_Id=7.2A_Rds=0.72R_Coss=125pF_TO-220
Also, it is easy to reduce the influence of Coss by serially connecting on the DRAIN of MOSFET diode like MR260 or MUR460 (any fast diode with Trr<70ns, U>500V and I>2A)
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Thank you very much for the informative answer. I have three options to choose from, which are very different.
1.mosfet 60r360q 600v, Coss 715pf, tr 41ns, Rds 0.36, qg 19nc.
2.mosfet SDP 7NA40 400V, Coss 120pf, tr75ns, Rds 0.82, qg 34nc.
3.mosfet KNB2D0N60D 600v, Coss 46pf, tr 60ns, Rds 3.8, qg 10.9nc.
Which one is better?
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